Tunable Infrared Phonon Anomalies in Trilayer Graphene

Tunable infrared phonon anomalies in trilayer graphene.

Trilayer graphene in both ABA (Bernal) and ABC (rhombohedral) stacking sequences is shown to exhibit intense infrared absorption from in-plane optical phonons. The phonon feature, lying at ~1580 cm(-1), changes strongly with electrostatic gating. For ABC-stacked graphene trilayers, we observed a large enhancement in phonon absorption amplitude, as well as softening of the phonon mode, as the Fe...

Gate tunable infrared phonon anomalies in bilayer graphene.

We observe a giant increase of the infrared intensity and a softening of the in-plane antisymmetric phonon mode E(u) ( approximately 0.2 eV) in bilayer graphene as a function of the gate-induced doping. The phonon peak has a pronounced Fano-like asymmetry. We suggest that the intensity growth and the softening originate from the coupling of the phonon mode to the narrow electronic transition be...

Observation of an electrically tunable band gap in trilayer graphene

A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field1–7. Thicker graphene layers are also highly attractive materials. The ability to produce a band gap in these systems is of great fundamental and practical interest. Both experimental8 and theoretical9–16 investigations of graphene trilay...

Tunable phonon-induced transparency in bilayer graphene nanoribbons.

In the phenomenon of plasmon-induced transparency, which is a classical analogue of electromagnetically induced transparency (EIT) in atomic gases, the coherent interference between two plasmon modes results in an optical transparency window in a broad absorption spectrum. With the requirement of contrasting lifetimes, typically one of the plasmon modes involved is a dark mode that has limited ...

Supporting Information: Tunable phonon-induced transparency in bilayer graphene nanoribbons